## Semiconductor superlattices and interfaces: Varenna on Lake Como, Villa Monsatero, 25 June-5 July 1991This book is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and applications. The papers deal with the interaction of theory, experiments and applications within the field, and the outstanding contributions are from both the academic and industrial worlds. |

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Page 63

9->0 6 J .Of The accuracy of the calculated second spherical moment A is mainly

determined by the size of the

and that of the region (A (equal to or contained within 6) where the integral is ...

9->0 6 J .Of The accuracy of the calculated second spherical moment A is mainly

determined by the size of the

**supercell**6 where the substitution is actually made,and that of the region (A (equal to or contained within 6) where the integral is ...

Page 68

The substitutions at the central site in the 32- atom b.c.c.

, whereas those at the borders of the cell are Ge — > Ge + + (1/3)(As-Ge). The

intersections of the plane with cation-centred 2-atom f.c.c, 16-atom f.c.c. and ...

The substitutions at the central site in the 32- atom b.c.c.

**supercell**are Ge — > Ga, whereas those at the borders of the cell are Ge — > Ge + + (1/3)(As-Ge). The

intersections of the plane with cation-centred 2-atom f.c.c, 16-atom f.c.c. and ...

Page 287

However, for the evaluation of the optical properties, the eigenvectors are

needed as well, so we reduced the size of the

computer memory limits. This size turns out to be sufficiently large in order to

avoid fictitious ...

However, for the evaluation of the optical properties, the eigenvectors are

needed as well, so we reduced the size of the

**supercell**to 480 atoms, due tocomputer memory limits. This size turns out to be sufficiently large in order to

avoid fictitious ...

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### Contents

Esaki The evolution of semiconductor quantum structures | 1 |

Conclusion | 20 |

F Flores J Ortega and R Perez Theoretical models on the for | 39 |

Copyright | |

51 other sections not shown

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### Common terms and phrases

absorption acoustic AlAs-like alloy AppL Phys atoms band discontinuities band gap band lineup band offset barrier beam Brillouin zone bulk calculated Capasso cationic charge neutrality levels conduction band confined corresponding crystal density dielectric dielectric function dipole disorder dispersion doping edited effects electric field electron energy envelope function epitaxial equation Esaki exciton experimental Fermi force constants frequency GaAs GaAs-like GaAs/AlAs growth heterojunction heterostructures interaction interband interface intralayer laser lattice layers Lett mass material matrix metal microscopic modes modulation monolayer neutrality levels obtained optical oscillations parameters peaks perturbation phonons Physics plane polaritons polarization potential problem properties quantum dots quantum wires resonance samples scattering semiconductor shown in fig silicides SL's solid spectrum strain structures subbands substrate supercell superlattice surface symmetry techniques temperature theoretical thickness tion transitions tunnelling valence band vibrational voltage wave functions wave vector wavelength width