## Semiconductor superlattices and interfaces: Varenna on Lake Como, Villa Monsatero, 25 June-5 July 1991This book is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and applications. The papers deal with the interaction of theory, experiments and applications within the field, and the outstanding contributions are from both the academic and industrial worlds. |

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Page 19

where Eo is the eigenenergy of an isolated QW. At a moderate field (2 - 104 V/

cm), b), electron and light-hole states are still extended over several SL periods,

whereas heavy holes are fully localized. Interband

...

where Eo is the eigenenergy of an isolated QW. At a moderate field (2 - 104 V/

cm), b), electron and light-hole states are still extended over several SL periods,

whereas heavy holes are fully localized. Interband

**transitions**(indicated by -2, -1,...

Page 146

in the E\\c polarization at 2.9 eV originates from the superposition of two high-

intensity partial contributions from the 6, 7— >8 interband

points r, ...

in the E\\c polarization at 2.9 eV originates from the superposition of two high-

intensity partial contributions from the 6, 7— >8 interband

**transitions**. These**transitions**take place in an extended part of the k space including the symmetrypoints r, ...

Page 425

As a consequence, PL

related to roughness. In the second case (fig. 66)) one of the interfaces has

terraces wider than the exciton diameter. Therefore, the distribution of well widths

has two ...

As a consequence, PL

**transitions**are broadened, and the linewidth can berelated to roughness. In the second case (fig. 66)) one of the interfaces has

terraces wider than the exciton diameter. Therefore, the distribution of well widths

has two ...

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### Contents

Esaki The evolution of semiconductor quantum structures | 1 |

Conclusion | 20 |

F Flores J Ortega and R Perez Theoretical models on the for | 39 |

Copyright | |

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absorption acoustic AlAs-like alloy AppL Phys atoms band discontinuities band gap band lineup band offset barrier beam Brillouin zone bulk calculated Capasso cationic charge neutrality levels conduction band confined corresponding crystal density dielectric dielectric function dipole disorder dispersion doping edited effects electric field electron energy envelope function epitaxial equation Esaki exciton experimental Fermi force constants frequency GaAs GaAs-like GaAs/AlAs growth heterojunction heterostructures interaction interband interface intralayer laser lattice layers Lett mass material matrix metal microscopic modes modulation monolayer neutrality levels obtained optical oscillations parameters peaks perturbation phonons Physics plane polaritons polarization potential problem properties quantum dots quantum wires resonance samples scattering semiconductor shown in fig silicides SL's solid spectrum strain structures subbands substrate supercell superlattice surface symmetry techniques temperature theoretical thickness tion transitions tunnelling valence band vibrational voltage wave functions wave vector wavelength width