Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures: Volume 592D. A. Buchanan, Arthur H. Edwards, H. J. von Bardeleben, T. Hattori With the ever-decreasing dimension, laterally and vertically, in CMOS and DRAM technology, the understanding of thin insulators and their interfaces with silicon have become of critical importance. As a result of this scaling of semiconductor devices, an increased interest from industrial, government, and university laboratories has become evident in this field of study. The book, first published in 2000, includes detailed theoretical studies of the nature of SiO2 and its interface with silicon, electron paramagnetic resonance for the study of defects, electron tunneling, and band alignment among others. There are also studies developing new techniques and advancing our understanding of these dielectrics and interfaces, including addressing the issue of dielectric breakdown. Aside from the work addressing SiO2, there are a number of papers regarding the application of the so-called 'high-k' dielectrics. The high-k materials addressed in the volume include such films as Ta2O5, HfO2, Bi2Ti2O7, CeO2, and ZrO2. |
Contents
Dynamics of Silicon Oxidation | 3 |
Microscopic and Theoretical Investigations of the SiSiO2 Interface | 15 |
Characterization of the Pы Interface Defect in Thermal 100SiSiO2 | 21 |
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Common terms and phrases
annealing Appl applied atomic band bond breakdown bulk calculated capacitors carrier characteristics charge compared concentration conduction constant corresponds curves decrease defects degradation density dependence deposition determined devices dielectric direct discussed distribution effect electrical electron energy experimental field Figure formed function gate grown growth higher hole IEEE incorporation increase indicates induced injection intensity interface interface trap irradiation layer leads leakage current Lett lower Materials measured mechanism method nitride nitrogen observed obtained oxide thickness oxygen oxynitride peak performed Phys Physics positive present profiles properties radical range reduced REFERENCES region reliability reported Research respectively roughness samples shift shows silicon SiO2 species spectra step stress structure substrate surface technique Technology temperature thermal thin films trap tunneling ultrathin values voltage wafers