Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures: Volume 592D. A. Buchanan With the ever-decreasing dimension, laterally and vertically, in CMOS and DRAM technology, the understanding of thin insulators and their interfaces with silicon have become of critical importance. As a result of this scaling of semiconductor devices, an increased interest from industrial, government, and university laboratories has become evident in this field of study. The book, first published in 2000, includes detailed theoretical studies of the nature of SiO2 and its interface with silicon, electron paramagnetic resonance for the study of defects, electron tunneling, and band alignment among others. There are also studies developing new techniques and advancing our understanding of these dielectrics and interfaces, including addressing the issue of dielectric breakdown. Aside from the work addressing SiO2, there are a number of papers regarding the application of the so-called 'high-k' dielectrics. The high-k materials addressed in the volume include such films as Ta2O5, HfO2, Bi2Ti2O7, CeO2, and ZrO2. |
Contents
Dynamics of Silicon Oxidation | 3 |
Microscopic and Theoretical Investigations of the SiSiO2 Interface | 15 |
Characterization of the Pы Interface Defect in Thermal 100SiSiO2 | 21 |
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Common terms and phrases
2000 Materials Research amorphous annealing Appl atomic band bandgap breakdown bulk calculated capacitors carrier characteristics charge charge pumping cm² concentration conduction band current density curves dangling bond decrease defects degradation deposition dielectric breakdown dielectric constant direct tunneling effect electrical Electron Devices electron traps ellipsometry energy epitaxial experimental Figure film thickness gate current gate dielectrics gate oxide gate voltage IEEE Trans increase intensity interface trap density irradiation leakage current Lett Lucovsky Materials Research Society measured MOSFET nitrogen observed oxide layer oxide thickness oxygen oxynitride film peak Phys plasma Proc profiles samples semiconductor shift shown in Fig shows Si/SiO2 interface silicon dioxide silicon nitride simulation SiO2 spectra stress structure suboxide surface Symp Ta₂O Technology temperature thermal oxide thin films threshold voltage transistor tunneling current ultrathin valence band wafers wet oxidized