Silicon Materials Science and Technology: Proceedings of the Eighth International Symposium on Silicon Materials Science and Technology, Volume 1Howard R. Huff, U. Gösele, H. Tsuya |
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annealing Appl atoms axial Bardeen Bell Labs boron Brattain calculated capacitor circuit cleaning cm³ CMF configuration contamination convection crucible crystal growth Czochralski decrease density device diameter dielectric diffusion diode dislocation distribution dopant doping effect electrical Electrochem Electron epitaxial wafers etching experimental ferroelectric Figure film fused quartz gate germanium gettering grown grown-in defects heat hydrogen hydrogen fluoride IEEE impurities increase integrated circuit interface interstitial junction transistor Laboratories layer magnetic field materials measured metal minority carrier n-type nitride nitrogen nucleation observed OSF-ring oxygen oxygen precipitation p-n junction parameters partial pressure particle patent Phys point defects point-contact transistor pulling rate quartz radial reduced region sample self-interstitials semiconductor Shockley shown in Fig silicon crystals silicon dioxide silicon melt silicon wafers simulation SiO2 stress striations structure substrate technique temperature thickness vacancy concentration voids voltage wafer surface X-ray