Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 20
... first-wall problems in fusion reactors. Even at relatively low bombarding energies [78—81] substantial implantation of the primary bombarding ions occurs (Fig. 2). When these ions lose their energy. they contribute to target heating and ...
... first-wall problems in fusion reactors. Even at relatively low bombarding energies [78—81] substantial implantation of the primary bombarding ions occurs (Fig. 2). When these ions lose their energy. they contribute to target heating and ...
Page 24
... first applied, a very small current flows. This is due to the presence ofa small number of ions and electrons resulting from a variety of sources (e.g.. cosmic radiation). Initially, the current is nearly constant, because all of the ...
... first applied, a very small current flows. This is due to the presence ofa small number of ions and electrons resulting from a variety of sources (e.g.. cosmic radiation). Initially, the current is nearly constant, because all of the ...
Page 27
... First electrons oscillating in the glow space acquire sufficient energy to cause ionizing collisions, thus reducing the dependence of the discharge on secondary electrons and lowering the. B. Low-Frequency AC Glow Discharges CURRENT (A) ...
... First electrons oscillating in the glow space acquire sufficient energy to cause ionizing collisions, thus reducing the dependence of the discharge on secondary electrons and lowering the. B. Low-Frequency AC Glow Discharges CURRENT (A) ...
Page 41
... first without substrates in exactly the way in which it will be mn during the deposition. A preconditioning run of this sort may have one or more of several beneficial effects: (1) the target altered surface layer is established, (2) ...
... first without substrates in exactly the way in which it will be mn during the deposition. A preconditioning run of this sort may have one or more of several beneficial effects: (1) the target altered surface layer is established, (2) ...
Page 42
... first few monolayers of the film [83]. In general, all discharge conditions (voltages, pressure, etc.) should be the same as those used during the subsequent deposition. C. Sputter Etching of Substrates Practical methods for cleaning ...
... first few monolayers of the film [83]. In general, all discharge conditions (voltages, pressure, etc.) should be the same as those used during the subsequent deposition. C. Sputter Etching of Substrates Practical methods for cleaning ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York