Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 12
... Flow 46 B. Sources of Gas Contamination 46 C. Getter Sputtering 47 D. Reactive Sputtering 48 VII. Deposition with ... Rate and Uniformity of Deposition 6] IX. Conclusion 62 References 62 I. INTRODUCTION Over the past 20 years or so there ...
... Flow 46 B. Sources of Gas Contamination 46 C. Getter Sputtering 47 D. Reactive Sputtering 48 VII. Deposition with ... Rate and Uniformity of Deposition 6] IX. Conclusion 62 References 62 I. INTRODUCTION Over the past 20 years or so there ...
Page 37
... flow throughput, which determines how fast impurities are flushed out of the ... rates can be monitored by controlling conditions and deposition time. Invacuum ... rate monitoring have been optical emission and absorption spectroscopies ...
... flow throughput, which determines how fast impurities are flushed out of the ... rates can be monitored by controlling conditions and deposition time. Invacuum ... rate monitoring have been optical emission and absorption spectroscopies ...
Page 46
... Flow The effects of increasing sputtering gas pressure are to increase discharge current, increase backscattering, and to slow energetic particles by inelastic collisions. The first two effects compete and largely determine deposition rates ...
... Flow The effects of increasing sputtering gas pressure are to increase discharge current, increase backscattering, and to slow energetic particles by inelastic collisions. The first two effects compete and largely determine deposition rates ...
Page 121
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Page 140
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Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York