Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Results 1-5 of 46
Page 5
... Appl. Phys. 43, 4680 (1972). . J. R. Arthur, in "Critical Reviews of Solid State Science“ (D. E. Schuele and R. W. Hoffman, eds.), Vol. 6, p. 413. CRC Press, Cleveland, 1976. 6a. B. A. Joyce and C. T. Foxon,in “Solid State Devices. 1976 ...
... Appl. Phys. 43, 4680 (1972). . J. R. Arthur, in "Critical Reviews of Solid State Science“ (D. E. Schuele and R. W. Hoffman, eds.), Vol. 6, p. 413. CRC Press, Cleveland, 1976. 6a. B. A. Joyce and C. T. Foxon,in “Solid State Devices. 1976 ...
Page 62
... , in “Handbook of Thin Film Technology" (L. I. Maissel and R. Glang, eds.), Ch. 4. McGraw-Hill, New York. 1970. G. S. Anderson. J. Appl. Phys. 40, 2884 (1969). 96a. 62 J. L. VOSSEN AND J. J. cuomo IX. Conclusion References.
... , in “Handbook of Thin Film Technology" (L. I. Maissel and R. Glang, eds.), Ch. 4. McGraw-Hill, New York. 1970. G. S. Anderson. J. Appl. Phys. 40, 2884 (1969). 96a. 62 J. L. VOSSEN AND J. J. cuomo IX. Conclusion References.
Page 63
... Appl. Phys. 37, 2820 (1966). D. McKeown, A. Cabezas, and E. T. Mackenzie, Annu. Rep. Low Energy Sputtering Stud.,' Space Sci. Lab., General Dynamics July (1961). R. C. Krutenat and C. Panzera, J. Appl. Phys. 41, 4953 (1970). T. W. ...
... Appl. Phys. 37, 2820 (1966). D. McKeown, A. Cabezas, and E. T. Mackenzie, Annu. Rep. Low Energy Sputtering Stud.,' Space Sci. Lab., General Dynamics July (1961). R. C. Krutenat and C. Panzera, J. Appl. Phys. 41, 4953 (1970). T. W. ...
Page 64
... Appl. Phys. 6, 161 (1955). K. Erents and G. Carter, J. Phys. D 2, 435 (1969). K. Erents and G. Carter. J. Phys. D 2, 711 (1969). H. F. Winters and P. Sigmund,J. Appl. Phys. 45, 4760 (1974). J. L. Vossen. J. Vac. Sci. Technol. 8, 751 ...
... Appl. Phys. 6, 161 (1955). K. Erents and G. Carter, J. Phys. D 2, 435 (1969). K. Erents and G. Carter. J. Phys. D 2, 711 (1969). H. F. Winters and P. Sigmund,J. Appl. Phys. 45, 4760 (1974). J. L. Vossen. J. Vac. Sci. Technol. 8, 751 ...
Page 65
... Appl. Phys. 41, 4237 (1970). R. Kelly and J. B. Sanders, Nucl. Instrum. Methods 132, 335 (1976). R. Holm and S. Storp, Appl. Phys. 12, 101 (1977). K. S. Kim and N. Winograd, Surf. Sci. 43, 625 (1974). K. S. Kim, W. E. Baitinger, and N ...
... Appl. Phys. 41, 4237 (1970). R. Kelly and J. B. Sanders, Nucl. Instrum. Methods 132, 335 (1976). R. Holm and S. Storp, Appl. Phys. 12, 101 (1977). K. S. Kim and N. Winograd, Surf. Sci. 43, 625 (1974). K. S. Kim, W. E. Baitinger, and N ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York