Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
From inside the book
Results 1-5 of 75
Page 25
... anode and cathode. Each secondary electron must produce about 10—20 ions for the original avalanche to occur. If the gas pressure is too low or the cathode—anode separation too small, the secondaries cannot undergo a sufficient number ...
... anode and cathode. Each secondary electron must produce about 10—20 ions for the original avalanche to occur. If the gas pressure is too low or the cathode—anode separation too small, the secondaries cannot undergo a sufficient number ...
Page 26
... anode. They are not at all essential to the operation of a glow discharge. In most sputtering systems, the anode is located in the negative glow and these other regions do not exist. The length of an unobstructed negative glow is ...
... anode. They are not at all essential to the operation of a glow discharge. In most sputtering systems, the anode is located in the negative glow and these other regions do not exist. The length of an unobstructed negative glow is ...
Page 27
... anode. In general, for uniform cathode bombardment, the anode should be located at least 3—4 times the thickness of the dark space away from the cathode. This distance, of course, is inversely related to gas pressure. Low-frequency ac ...
... anode. In general, for uniform cathode bombardment, the anode should be located at least 3—4 times the thickness of the dark space away from the cathode. This distance, of course, is inversely related to gas pressure. Low-frequency ac ...
Page 30
... anode. The magnetic field pinches the discharge in toward the center of the target, resulting in nonuniformity of film thickness. For relatively small targets (<20-cm diameter) the judicious use of low magnetic fields (10—50 G) can be ...
... anode. The magnetic field pinches the discharge in toward the center of the target, resulting in nonuniformity of film thickness. For relatively small targets (<20-cm diameter) the judicious use of low magnetic fields (10—50 G) can be ...
Page 32
... anode substrate holder. (3) cathode and anode magnets (water cooled). (4) shutter (SS), (5) cathode shield (SS), (6) cathode water cooling, (7) cathode isolation insulator. (8) substrate thermocouple. (9) substrates, (10) anode ...
... anode substrate holder. (3) cathode and anode magnets (water cooled). (4) shutter (SS), (5) cathode shield (SS), (6) cathode water cooling, (7) cathode isolation insulator. (8) substrate thermocouple. (9) substrates, (10) anode ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
Other editions - View all
Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York