Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 21
... composition is that of the bulk target composition and the altered layer will recede uniformly with continued sputtering as long as the steady state conditions are maintained. Data on altered layers come from several areas: sputter ...
... composition is that of the bulk target composition and the altered layer will recede uniformly with continued sputtering as long as the steady state conditions are maintained. Data on altered layers come from several areas: sputter ...
Page 22
John L. Vossen. 2. Yield The surface composition alteration generally assumes yields of the components as in the elemental form [88], although it is has been shown [87] that some alloys have yields that are greater than those of either ...
John L. Vossen. 2. Yield The surface composition alteration generally assumes yields of the components as in the elemental form [88], although it is has been shown [87] that some alloys have yields that are greater than those of either ...
Page 42
... composition of the first few monolayers of the film [83]. In general, all discharge conditions (voltages, pressure, etc.) should be the same as those used during the subsequent deposition. C. Sputter Etching of Substrates Practical ...
... composition of the first few monolayers of the film [83]. In general, all discharge conditions (voltages, pressure, etc.) should be the same as those used during the subsequent deposition. C. Sputter Etching of Substrates Practical ...
Page 48
... composition: Air, 02 , or H20 (oxides), N2 or NH, (nitrides), 02 + N2(Oxynitrides), H28 (sulfides), C2H2 or CH4 (carbides), SiH4 (silicides), HF or CF4 (fluorides), As (arsenides), etc. There are obvious safety problems 48 J. L. VOSSEN ...
... composition: Air, 02 , or H20 (oxides), N2 or NH, (nitrides), 02 + N2(Oxynitrides), H28 (sulfides), C2H2 or CH4 (carbides), SiH4 (silicides), HF or CF4 (fluorides), As (arsenides), etc. There are obvious safety problems 48 J. L. VOSSEN ...
Page 54
... composition or other properties as a function of distance from the edge of the substrate. The only exception to this rule is in the case of a conducting substrate onto which a conducting film is to be deposited. Finally, since target ...
... composition or other properties as a function of distance from the edge of the substrate. The only exception to this rule is in the case of a conducting substrate onto which a conducting film is to be deposited. Finally, since target ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York