Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page v
... Configuration 3] V. Preconditioning of Targets, Substrates, and Systems for Film Deposition 4] VI. The Sputtering Gas 46 VII. Deposition with Simultaneous Ion Bombardment of the Substrate and Growing Film 50 VIII. Rate and Uniformity of ...
... Configuration 3] V. Preconditioning of Targets, Substrates, and Systems for Film Deposition 4] VI. The Sputtering Gas 46 VII. Deposition with Simultaneous Ion Bombardment of the Substrate and Growing Film 50 VIII. Rate and Uniformity of ...
Page 3
... configurations. These are highly efficient glow discharge sputtering sources that depend on crossed electric and magnetic fields to produce high ion densities and high deposition rates with minimal substrate bOmbardment. Chapter II-2 ...
... configurations. These are highly efficient glow discharge sputtering sources that depend on crossed electric and magnetic fields to produce high ion densities and high deposition rates with minimal substrate bOmbardment. Chapter II-2 ...
Page 11
... Configuration :ommoow> . Target Assemblies . Power Supplies Instrumentation and Control . Substrate Heaters . Wall Losses Shields and Shutters . Deposition Sources for Bias Sputtering and Ion Plating . Scale-Up Problems V ...
... Configuration :ommoow> . Target Assemblies . Power Supplies Instrumentation and Control . Substrate Heaters . Wall Losses Shields and Shutters . Deposition Sources for Bias Sputtering and Ion Plating . Scale-Up Problems V ...
Page 14
... configuration, etc. that bear on the ability to control the properties of thin films. ll. PHYSICAL AND CHEMICAL EFFECTS OF ION BOMBARDMENT ON SURFACES In sputter deposition, surfaces subject to ion bombardment are usually considered as ...
... configuration, etc. that bear on the ability to control the properties of thin films. ll. PHYSICAL AND CHEMICAL EFFECTS OF ION BOMBARDMENT ON SURFACES In sputter deposition, surfaces subject to ion bombardment are usually considered as ...
Page 25
... configurations it is often necessary to increase the gas pressure momentarily to start the discharge. Alternatively, an external ionizing source may be used (e.g., a Tesla coil connected into the chamber by a high-voltage feedthrough) ...
... configurations it is often necessary to increase the gas pressure momentarily to start the discharge. Alternatively, an external ionizing source may be used (e.g., a Tesla coil connected into the chamber by a high-voltage feedthrough) ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York