Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 21
... CURRENT DENSITY (A/cmZ) Fig. 3. The formation of a dc. II-I. GLOW DISCHARGE SPUTTER DEPOSITION 21.
... CURRENT DENSITY (A/cmZ) Fig. 3. The formation of a dc. II-I. GLOW DISCHARGE SPUTTER DEPOSITION 21.
Page 24
... current flows. This is due to the presence ofa small number of ions and electrons resulting from a variety of ... density is achieved. (This region of the glow discharge is used for voltage regulator tubes.) After the bombardment covers the ...
... current flows. This is due to the presence ofa small number of ions and electrons resulting from a variety of ... density is achieved. (This region of the glow discharge is used for voltage regulator tubes.) After the bombardment covers the ...
Page 25
... current density reaches about 0.1 A/cm", thermionic electrons are emitted in addition to secondary electrons. followed by a further avalanche. The output impedance of the power supply limits the voltage, and the low-voltage high-current ...
... current density reaches about 0.1 A/cm", thermionic electrons are emitted in addition to secondary electrons. followed by a further avalanche. The output impedance of the power supply limits the voltage, and the low-voltage high-current ...
Page 31
... density, allows operation at much lower pressures than a two-terminal glow discharge, and allows control of the target current density independent of the target voltage. However, it is not necessarily good practice to operate a ...
... density, allows operation at much lower pressures than a two-terminal glow discharge, and allows control of the target current density independent of the target voltage. However, it is not necessarily good practice to operate a ...
Page 61
... density, electrical properties, magnetic properties, adhesion, and surface morphology, to name but a few. In ... current increases (increasing rate), but return of material to the target by backscattering also increases (decreasing rate) ...
... density, electrical properties, magnetic properties, adhesion, and surface morphology, to name but a few. In ... current increases (increasing rate), but return of material to the target by backscattering also increases (decreasing rate) ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York