Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
From inside the book
Results 1-5 of 88
Page 14
... EFFECTS OF ION BOMBARDMENT ON SURFACES In sputter deposition, surfaces subject to ion bombardment are usually considered as the source of material from which films are grown. In addition to the neutral (sputtered) material liberated ...
... EFFECTS OF ION BOMBARDMENT ON SURFACES In sputter deposition, surfaces subject to ion bombardment are usually considered as the source of material from which films are grown. In addition to the neutral (sputtered) material liberated ...
Page 19
... effect. These reflected particles are neutralized and reflected as atoms, not ions. The amount of reflection is an inverse function of primary bombarding energy because this effect competes with ion implantation. As low primary energies ...
... effect. These reflected particles are neutralized and reflected as atoms, not ions. The amount of reflection is an inverse function of primary bombarding energy because this effect competes with ion implantation. As low primary energies ...
Page 20
... effect is mainly related to radiation damage to surfacesensitive substrates by energetic UV photons. However, it has been used to advantage to monitor sputter deposition and etching rates (Section IV.C). 2. X rays X rays characteristic ...
... effect is mainly related to radiation damage to surfacesensitive substrates by energetic UV photons. However, it has been used to advantage to monitor sputter deposition and etching rates (Section IV.C). 2. X rays X rays characteristic ...
Page 23
... effect can lead to stoichiometric differences between the target and the deposited film. For fixed sputtering conditions, it is possible to compensate for this effect by purposely enriching the target in the volatile material [98]. 2 ...
... effect can lead to stoichiometric differences between the target and the deposited film. For fixed sputtering conditions, it is possible to compensate for this effect by purposely enriching the target in the volatile material [98]. 2 ...
Page 30
... effect is to give electrons a longer path length for a fixed mean free path, thus increasing the probability of ionizing collisions before the electron reaches the anode. The magnetic field pinches the discharge in toward the center of ...
... effect is to give electrons a longer path length for a fixed mean free path, thus increasing the probability of ionizing collisions before the electron reaches the anode. The magnetic field pinches the discharge in toward the center of ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
Other editions - View all
Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York