Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Results 1-5 of 91
Page 4
... electron-beam, rf-, l7. Wire flame spraying [32, 50, 51] or laser-heated 18. Powder flame spraying [32, 51, 52] sources 19. Plasma flame spraying [32, 51, 53] 2. Molecular-beam [6. 6a] 20. Arc plasma spraying [54-57] epitaxy 21 ...
... electron-beam, rf-, l7. Wire flame spraying [32, 50, 51] or laser-heated 18. Powder flame spraying [32, 51, 52] sources 19. Plasma flame spraying [32, 51, 53] 2. Molecular-beam [6. 6a] 20. Arc plasma spraying [54-57] epitaxy 21 ...
Page 7
... Electron Devices ED-22, 440 (1975). L. F. Thompson and R. E. Kerwin, Annu. Rev. Mater. Sci. 6, 267 (1976). E. 1. Gordon and D. R. Herriott, IEEE Trans. Electron Devices ED-22, 371 (1975). H. I. Smith, Proc. IEEE 62, 1361 (I974). Part /I ...
... Electron Devices ED-22, 440 (1975). L. F. Thompson and R. E. Kerwin, Annu. Rev. Mater. Sci. 6, 267 (1976). E. 1. Gordon and D. R. Herriott, IEEE Trans. Electron Devices ED-22, 371 (1975). H. I. Smith, Proc. IEEE 62, 1361 (I974). Part /I ...
Page 16
... Electrons Since sputtering targets are held at high negative potentials. secondary electrons are accelerated away from the target surface with an initial energy equal to the target potential. As will be shown in Section III.A, these ...
... Electrons Since sputtering targets are held at high negative potentials. secondary electrons are accelerated away from the target surface with an initial energy equal to the target potential. As will be shown in Section III.A, these ...
Page 17
... electrons in an avalanche process. Upon arrival at the substrate, such energy as they retain after collisions in the gas is liberated in the form of heat [38—43]. Many of the secondary electrons are thermalized by collisions in the gas ...
... electrons in an avalanche process. Upon arrival at the substrate, such energy as they retain after collisions in the gas is liberated in the form of heat [38—43]. Many of the secondary electrons are thermalized by collisions in the gas ...
Page 19
... electron-affinity constituents of alloys [53a,b]. Virtually no secondary negative ions are produced during inert gas ion bombardment of pure metal surfaces. Negative ions, like electrons, are accelerated away from the target toward the ...
... electron-affinity constituents of alloys [53a,b]. Virtually no secondary negative ions are produced during inert gas ion bombardment of pure metal surfaces. Negative ions, like electrons, are accelerated away from the target toward the ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York