Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 14
... for sputtering processes (10—5000 eV), the yield increases with incident ion energy, and with the mass and d-shell filling 14 J. L. VOSSEN AND J. J. cuomo II. Physical and Chemical Effects of Ion Bombardment on Surfaces.
... for sputtering processes (10—5000 eV), the yield increases with incident ion energy, and with the mass and d-shell filling 14 J. L. VOSSEN AND J. J. cuomo II. Physical and Chemical Effects of Ion Bombardment on Surfaces.
Page 24
... increased, sufficient energy is imparted to the charged particles so that they produce more charged particles by ... increases steadily, but the voltage is limited by the output impedence of the power supply. This region is known as the ...
... increased, sufficient energy is imparted to the charged particles so that they produce more charged particles by ... increases steadily, but the voltage is limited by the output impedence of the power supply. This region is known as the ...
Page 25
... increase the gas pressure momentarily to start the discharge. Alternatively, an external ionizing source may be used (e.g., a Tesla coil connected into the chamber by a high-voltage feedthrough). VOLTAGE it PRESSURE X SEPARATION Fig. 4 ...
... increase the gas pressure momentarily to start the discharge. Alternatively, an external ionizing source may be used (e.g., a Tesla coil connected into the chamber by a high-voltage feedthrough). VOLTAGE it PRESSURE X SEPARATION Fig. 4 ...
Page 31
... increase the ionization efficiency at low gas pressure [138]. The evaporant passes through the coil in transit to substrates attached to a dc sputtering target. This increases the level of ionization of both the evaporant and the ...
... increase the ionization efficiency at low gas pressure [138]. The evaporant passes through the coil in transit to substrates attached to a dc sputtering target. This increases the level of ionization of both the evaporant and the ...
Page 44
... increased from 0.5-2.5 kV. The amounts Of damage produced and gas incorporated increase with increasing substrate temperature [227]. In some cases, conelike features have been observed on sputteretched surfaces subject to backscattering ...
... increased from 0.5-2.5 kV. The amounts Of damage produced and gas incorporated increase with increasing substrate temperature [227]. In some cases, conelike features have been observed on sputteretched surfaces subject to backscattering ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York