Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 11
... Layers and Diffusion Dissociation Processes Chemical Sputtering ow Discharges DC Glow Discharges Low-Frequency AC Glow Discharges RF Glow Discharges Discharge Supporting Modes IV. Equipment Configuration :ommoow> . Target Assemblies ...
... Layers and Diffusion Dissociation Processes Chemical Sputtering ow Discharges DC Glow Discharges Low-Frequency AC Glow Discharges RF Glow Discharges Discharge Supporting Modes IV. Equipment Configuration :ommoow> . Target Assemblies ...
Page 19
... layers on target surfaces are sputtered away, and then, depending on the nature of the target material, chemisorbed gases, occluded gases, and gases generated by decomposition of target compounds are released in that order [63 —66]. For ...
... layers on target surfaces are sputtered away, and then, depending on the nature of the target material, chemisorbed gases, occluded gases, and gases generated by decomposition of target compounds are released in that order [63 —66]. For ...
Page 21
... layer will recede uniformly with continued sputtering as long as the steady state conditions are maintained. Data on altered layers come from several areas: sputter deposition [83, 84], surface analysis [85, 86], and ion beam alteration ...
... layer will recede uniformly with continued sputtering as long as the steady state conditions are maintained. Data on altered layers come from several areas: sputter deposition [83, 84], surface analysis [85, 86], and ion beam alteration ...
Page 22
... layer has been explored in some detail for a variety of targets [83 —85, 92—94]. Estimates for metal alloys have been a few tens of angstroms. For oxides the layer is much thicker (~ 1000 A) [94]. 4. Difi'usion Diffusion severely ...
... layer has been explored in some detail for a variety of targets [83 —85, 92—94]. Estimates for metal alloys have been a few tens of angstroms. For oxides the layer is much thicker (~ 1000 A) [94]. 4. Difi'usion Diffusion severely ...
Page 26
... layer known as the cathode glow. This is the region in which incoming discharge ions and positive ions produced at the cathode are neutralized by a variety of processes. This is also the region in which secondary electrons begin to ...
... layer known as the cathode glow. This is the region in which incoming discharge ions and positive ions produced at the cathode are neutralized by a variety of processes. This is also the region in which secondary electrons begin to ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York