Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 12
... millitorr to about 100 mTorr are used. The most common sputtering gas is argon. When the glow discharge is started, positive ions strike the target plate and remove mainly neutral target atoms by momentum transfer, and these NEGATIVE ...
... millitorr to about 100 mTorr are used. The most common sputtering gas is argon. When the glow discharge is started, positive ions strike the target plate and remove mainly neutral target atoms by momentum transfer, and these NEGATIVE ...
Page 34
... — Fig. 9. Typical maximum output voltage and current for a magnetically shunted dc _ power supply rated at 2 kW. OUTPUT VOLTAGE (kV) O | L 1 O O 2 0.4 0.6 O 8 OUTPUT CURRENTIA) 900 I I 1 l I I 1 2 mTorr. 34 J. L. VOSSEN AND J. J. CUOMO.
... — Fig. 9. Typical maximum output voltage and current for a magnetically shunted dc _ power supply rated at 2 kW. OUTPUT VOLTAGE (kV) O | L 1 O O 2 0.4 0.6 O 8 OUTPUT CURRENTIA) 900 I I 1 l I I 1 2 mTorr. 34 J. L. VOSSEN AND J. J. CUOMO.
Page 35
John L. Vossen. 900 I I 1 l I I 1 2 mTorr BOO ._ / Ar 700— / _ _ / eoo / - 500 — / _ 400- / ,- ~ '50 meL Ar quencies and their tolerances most often used are 13.56 1 0.00678, 27.12 i 0.0160, and 40.68 i 0.020 MHz. Since the output ...
John L. Vossen. 900 I I 1 l I I 1 2 mTorr BOO ._ / Ar 700— / _ _ / eoo / - 500 — / _ 400- / ,- ~ '50 meL Ar quencies and their tolerances most often used are 13.56 1 0.00678, 27.12 i 0.0160, and 40.68 i 0.020 MHz. Since the output ...
Page 39
... mTorr) a safe distance is about 10 cm. F. Shields and Shutters Dark-space shields around targets and shutters used for preconditioning targets and/or substrates are necessary objects which must be near the target. To minimize their ...
... mTorr) a safe distance is about 10 cm. F. Shields and Shutters Dark-space shields around targets and shutters used for preconditioning targets and/or substrates are necessary objects which must be near the target. To minimize their ...
Page 55
... (mTORR) 100— 50— TARGET SUBSTRATE ' 8 5cm ; 20l v 10— _I E 5_ ZOmTORR Z LLI 1O 2_\//'OOMTORR D. (D Z l— E 005._l u. 0.2— OI l l l l l A o I 2 3 4 5 DC TARGET VOLTAGE t—rv) L > J, 10— oé , 20 mTORR :5 . 50mTORR 35 2 / ' IOOmTORR lLfl. VDC ...
... (mTORR) 100— 50— TARGET SUBSTRATE ' 8 5cm ; 20l v 10— _I E 5_ ZOmTORR Z LLI 1O 2_\//'OOMTORR D. (D Z l— E 005._l u. 0.2— OI l l l l l A o I 2 3 4 5 DC TARGET VOLTAGE t—rv) L > J, 10— oé , 20 mTORR :5 . 50mTORR 35 2 / ' IOOmTORR lLfl. VDC ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York