Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 44
... masks. Once such structures are formed, the sputter-etch rate of the surface drops markedly for geometric reasons [11, l 1 1, 229]. In selected cases, it is possible to add reactive gases that depress the backscattering rate to reduce ...
... masks. Once such structures are formed, the sputter-etch rate of the surface drops markedly for geometric reasons [11, l 1 1, 229]. In selected cases, it is possible to add reactive gases that depress the backscattering rate to reduce ...
Page 100
... on a glass plate placed a small distance behind a mask with a small aperture. The cathode did not have wing shrouds. ORIGINAL CATHODE S URFACE 0. 05 kr_,;__-.A--iw—1 s , ,;~. |()() JOHN A. THORNTON AND ALAN s. PENFOLD.
... on a glass plate placed a small distance behind a mask with a small aperture. The cathode did not have wing shrouds. ORIGINAL CATHODE S URFACE 0. 05 kr_,;__-.A--iw—1 s , ,;~. |()() JOHN A. THORNTON AND ALAN s. PENFOLD.
Page 103
... masks can be effectively used to define deposition areas. Furthermore, the sputtered atoms pass to the substrates with little loss of kinetic energy, as do energetic neutral atoms (ions that are neutralized and reflected at the target ...
... masks can be effectively used to define deposition areas. Furthermore, the sputtered atoms pass to the substrates with little loss of kinetic energy, as do energetic neutral atoms (ions that are neutralized and reflected at the target ...
Page 124
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Page 293
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Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York