Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 12
... Potentials 50 B. Gas Incorporation and Desorption 53 C. Stoichiometry of Films 60 D. Physical Film Properties 60 VIII. Rate and Uniformity of Deposition 6] IX. Conclusion 62 References 62 I. INTRODUCTION Over the past 20 years or so ...
... Potentials 50 B. Gas Incorporation and Desorption 53 C. Stoichiometry of Films 60 D. Physical Film Properties 60 VIII. Rate and Uniformity of Deposition 6] IX. Conclusion 62 References 62 I. INTRODUCTION Over the past 20 years or so ...
Page 13
... potential (usually negative) is applied to the substrate holder, so that the growing film is subject to positive ion bombardment. This is known variously as bias sputtering or ion plating. Initially, the term “ion plating“ referred to a ...
... potential (usually negative) is applied to the substrate holder, so that the growing film is subject to positive ion bombardment. This is known variously as bias sputtering or ion plating. Initially, the term “ion plating“ referred to a ...
Page 14
... potential with respect to its surroundings and must be considered a sputtering target.) There have been several recent comprehensive reviews of the kinetics involved when a surface is ion bombarded [3, 6, 8, 12]. Therefore, we shall ...
... potential with respect to its surroundings and must be considered a sputtering target.) There have been several recent comprehensive reviews of the kinetics involved when a surface is ion bombarded [3, 6, 8, 12]. Therefore, we shall ...
Page 16
... potentials. secondary electrons are accelerated away from the target surface with an initial energy equal to the target potential. As will be shown in Section III.A, these electrons help to sustain the glow discharge by ionization of ...
... potentials. secondary electrons are accelerated away from the target surface with an initial energy equal to the target potential. As will be shown in Section III.A, these electrons help to sustain the glow discharge by ionization of ...
Page 17
... potential upon impact at the substrates [41, 42]. 2. Secondary Ions Most of the data on ion emission from solids due to primary ion bombardment is to be found in the literature of secondary ion mass spectroscopy (SIMS). Most of this ...
... potential upon impact at the substrates [41, 42]. 2. Secondary Ions Most of the data on ion emission from solids due to primary ion bombardment is to be found in the literature of secondary ion mass spectroscopy (SIMS). Most of this ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York