Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 25
... pressure and electrode separation (Fig. 4). In most sputtering glow discharges, the pressure-separation product is well to the left of the minimum, thus requiring relatively high discharge starting voltages. In close-spaced electrode ...
... pressure and electrode separation (Fig. 4). In most sputtering glow discharges, the pressure-separation product is well to the left of the minimum, thus requiring relatively high discharge starting voltages. In close-spaced electrode ...
Page 26
John L. Vossen. VOLTAGE it PRESSURE X SEPARATION Fig. 4. Paschen"s Law. Figure 5 illustrates the luminous regions of a dc glow discharge, the voltage distribution, and the net space charge as a function of distance from cathode to anode ...
John L. Vossen. VOLTAGE it PRESSURE X SEPARATION Fig. 4. Paschen"s Law. Figure 5 illustrates the luminous regions of a dc glow discharge, the voltage distribution, and the net space charge as a function of distance from cathode to anode ...
Page 31
... pressures than a two-terminal glow discharge, and allows control of the target current density independent of the ... pressure [138]. The evaporant passes through the coil in transit to substrates attached to a dc sputtering target ...
... pressures than a two-terminal glow discharge, and allows control of the target current density independent of the ... pressure [138]. The evaporant passes through the coil in transit to substrates attached to a dc sputtering target ...
Page 36
... pressure. In rfglow discharges it is often useful to measure both the average dc self-bias voltage, the peak-to-peak voltage, the waveform, and the phase angle. Pressure measurements can be especially difficult. Thermocouple, Pirani ...
... pressure. In rfglow discharges it is often useful to measure both the average dc self-bias voltage, the peak-to-peak voltage, the waveform, and the phase angle. Pressure measurements can be especially difficult. Thermocouple, Pirani ...
Page 39
... pressure. For typical gas pressures (5-50 mTorr) a safe distance is about 10 cm. F. Shields and Shutters Dark-space shields around targets and shutters used for preconditioning targets and/or substrates are necessary objects which must ...
... pressure. For typical gas pressures (5-50 mTorr) a safe distance is about 10 cm. F. Shields and Shutters Dark-space shields around targets and shutters used for preconditioning targets and/or substrates are necessary objects which must ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York