Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 14
... reflection of incident particles, heating, chemical dissociation or reaction, bulk diffusion, crystallographic changes, and reflection of some of the emitted particles back to the bombarded surface (backseattering). It should be noted ...
... reflection of incident particles, heating, chemical dissociation or reaction, bulk diffusion, crystallographic changes, and reflection of some of the emitted particles back to the bombarded surface (backseattering). It should be noted ...
Page 19
... reflected particles are neutralized and reflected as atoms, not ions. The amount of reflection is an inverse function of primary bombarding energy because this effect competes with ion implantation. As low primary energies, reflection ...
... reflected particles are neutralized and reflected as atoms, not ions. The amount of reflection is an inverse function of primary bombarding energy because this effect competes with ion implantation. As low primary energies, reflection ...
Page 36
... reflected power appears on the plate rather than the grids of the tubes. 4 . RF (S elf-Excited ) While crystal-controlled rfgenerators are most commonly used, variable-frequency, self-excited oscillators have advantages in some ...
... reflected power appears on the plate rather than the grids of the tubes. 4 . RF (S elf-Excited ) While crystal-controlled rfgenerators are most commonly used, variable-frequency, self-excited oscillators have advantages in some ...
Page 58
... reflected from the target and /or generated in the glow discharge by various excitation processes also bombard the substrate. Clearly these are unaffected by the substrate potential, and bombardment from this source is impossible to ...
... reflected from the target and /or generated in the glow discharge by various excitation processes also bombard the substrate. Clearly these are unaffected by the substrate potential, and bombardment from this source is impossible to ...
Page 59
... reflected at high energy toward the substrate where they may be implanted; and ions can bombard the substrate and be implanted because of the effective substrate bias. I. Substrate Bias The effective substrate bias is the most important ...
... reflected at high energy toward the substrate where they may be implanted; and ions can bombard the substrate and be implanted because of the effective substrate bias. I. Substrate Bias The effective substrate bias is the most important ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York