Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 12
... Species, Pressure, and Flow 46 B. Sources of Gas Contamination 46 C. Getter Sputtering 47 D. Reactive Sputtering 48 VII. Deposition with Simultaneous Ion Bombardment of the Substrate and Growing Film 50 A. Plasma, Floating, and Bias ...
... Species, Pressure, and Flow 46 B. Sources of Gas Contamination 46 C. Getter Sputtering 47 D. Reactive Sputtering 48 VII. Deposition with Simultaneous Ion Bombardment of the Substrate and Growing Film 50 A. Plasma, Floating, and Bias ...
Page 13
... species (e.g., TiO2). Reactive sputtering is also used to replenish constituents of compound targets lost by dissociation. The reactive version of ion plating is sometimes known as activated reactive evaporation [18], but this ...
... species (e.g., TiO2). Reactive sputtering is also used to replenish constituents of compound targets lost by dissociation. The reactive version of ion plating is sometimes known as activated reactive evaporation [18], but this ...
Page 19
... species of compounds [48-51] and high-electron-affinity constituents of alloys [53a,b]. Virtually no secondary negative ions are produced during inert gas ion bombardment of pure metal surfaces. Negative ions, like electrons, are ...
... species of compounds [48-51] and high-electron-affinity constituents of alloys [53a,b]. Virtually no secondary negative ions are produced during inert gas ion bombardment of pure metal surfaces. Negative ions, like electrons, are ...
Page 20
... species of the sputtered atoms. Only semiquantitative data on this phenomenon have been reported, but the heirarchy of emission proceeds from low to high in the sequence: elemental targets, binary compounds, ternary compounds, etc ...
... species of the sputtered atoms. Only semiquantitative data on this phenomenon have been reported, but the heirarchy of emission proceeds from low to high in the sequence: elemental targets, binary compounds, ternary compounds, etc ...
Page 22
... species [93, 95]. As noted in the previous section, surface diffusion will be affected by the phases present, grain size, and the nature of the species in the target. The temperature dependence of diffusion of the two phase AgCu system ...
... species [93, 95]. As noted in the previous section, surface diffusion will be affected by the phases present, grain size, and the nature of the species in the target. The temperature dependence of diffusion of the two phase AgCu system ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York