Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 12
... Stoichiometry of Films 60 D. Physical Film Properties 60 VIII. Rate and Uniformity of Deposition 6] IX. Conclusion 62 References 62 I. INTRODUCTION Over the past 20 years or so there have been numerous reviews of sputtering and ...
... Stoichiometry of Films 60 D. Physical Film Properties 60 VIII. Rate and Uniformity of Deposition 6] IX. Conclusion 62 References 62 I. INTRODUCTION Over the past 20 years or so there have been numerous reviews of sputtering and ...
Page 23
... stoichiometric oxides, nitrides, sulfides, etc. are desired in the film, it is virtually always required to add 02, N2, H28, etc. to the sputtering gas to ensure stoichiometry by reactive sputtering. In some cases, sputtering with 100 ...
... stoichiometric oxides, nitrides, sulfides, etc. are desired in the film, it is virtually always required to add 02, N2, H28, etc. to the sputtering gas to ensure stoichiometry by reactive sputtering. In some cases, sputtering with 100 ...
Page 48
... stoichiometry in the face of de— composition: Air, 02 , or H20 (oxides), N2 or NH, (nitrides), 02 + N2(Oxynitrides), H28 (sulfides), C2H2 or CH4 (carbides), SiH4 (silicides), HF or CF4 (fluorides), As (arsenides), etc. There are obvious ...
... stoichiometry in the face of de— composition: Air, 02 , or H20 (oxides), N2 or NH, (nitrides), 02 + N2(Oxynitrides), H28 (sulfides), C2H2 or CH4 (carbides), SiH4 (silicides), HF or CF4 (fluorides), As (arsenides), etc. There are obvious ...
Page 49
... stoichiometry Of the film depends on the relative rates of arrival at the substrate of metal vapor and reactive gas. Under these conditions, the rate of removal and/or decomposition of compounds at the target surface is far faster than ...
... stoichiometry Of the film depends on the relative rates of arrival at the substrate of metal vapor and reactive gas. Under these conditions, the rate of removal and/or decomposition of compounds at the target surface is far faster than ...
Page 50
... stoichiometry is not included. The table is organized alphabetically by source material with elemental sources first, then binary sources, ternary sources, etc. For multielement sources, the elements are listed according to their ...
... stoichiometry is not included. The table is organized alphabetically by source material with elemental sources first, then binary sources, ternary sources, etc. For multielement sources, the elements are listed according to their ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York