Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 12
... Substrates 42 VI. The Sputtering Gas 46 A. Effects of Gas Species, Pressure, and Flow 46 B. Sources of Gas Contamination 46 C. Getter Sputtering 47 D. Reactive Sputtering 48 VII. Deposition with Simultaneous Ion Bombardment of the Substrate ...
... Substrates 42 VI. The Sputtering Gas 46 A. Effects of Gas Species, Pressure, and Flow 46 B. Sources of Gas Contamination 46 C. Getter Sputtering 47 D. Reactive Sputtering 48 VII. Deposition with Simultaneous Ion Bombardment of the Substrate ...
Page 13
... substrates were connected to a dc sputtering target [16], but it has sometimes been applied to any process in which the substrate is subjected to purposeful ion bombardment during film growth in a glow discharge environment [17]. In ...
... substrates were connected to a dc sputtering target [16], but it has sometimes been applied to any process in which the substrate is subjected to purposeful ion bombardment during film growth in a glow discharge environment [17]. In ...
Page 19
... substrates, thus representing another source of substrate bombardment. Experimental evidence [54] shows that these ions actually arrive at the substrates as energetic neutrals, having suffered electron-stripping collisions in transit ...
... substrates, thus representing another source of substrate bombardment. Experimental evidence [54] shows that these ions actually arrive at the substrates as energetic neutrals, having suffered electron-stripping collisions in transit ...
Page 20
... substrates. Also energetic secondary electrons originating at the target which arrive at substrates can generate x rays at the substrate surface. Tables of x-ray energies and excitation potentials [77] can sometimes be used to estimate ...
... substrates. Also energetic secondary electrons originating at the target which arrive at substrates can generate x rays at the substrate surface. Tables of x-ray energies and excitation potentials [77] can sometimes be used to estimate ...
Page 23
... substrate where they can recombine to form the original compound. At low target potentials, these secondary ions have insufficient energy to survive the collisions encountered between the target and the substrate, and are lost to the ...
... substrate where they can recombine to form the original compound. At low target potentials, these secondary ions have insufficient energy to survive the collisions encountered between the target and the substrate, and are lost to the ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York