Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 24
... sufficient energy is imparted to the charged particles so that they produce more charged particles by collisions with the electrodes (secondary electron emission) and with neutral gas atoms. As more charge is created the current ...
... sufficient energy is imparted to the charged particles so that they produce more charged particles by collisions with the electrodes (secondary electron emission) and with neutral gas atoms. As more charge is created the current ...
Page 25
... sufficient number of ionizing collisions before they strike the anode. If the pressure and/0r separation are too large, ions generated in the gas are slowed by inelastic collisions so that they strike the cathode with insufficient ...
... sufficient number of ionizing collisions before they strike the anode. If the pressure and/0r separation are too large, ions generated in the gas are slowed by inelastic collisions so that they strike the cathode with insufficient ...
Page 27
... sufficient energy to cause ionizing collisions, thus reducing the dependence of the discharge on secondary electrons and lowering the. B. Low-Frequency AC Glow Discharges CURRENT (A) Fig. 10. Typical operating characteristics of a ...
... sufficient energy to cause ionizing collisions, thus reducing the dependence of the discharge on secondary electrons and lowering the. B. Low-Frequency AC Glow Discharges CURRENT (A) Fig. 10. Typical operating characteristics of a ...
Page 28
... sufficiently immobile that one would expect negligible ion bombardment Of the electrodes. In fact this is not the case. If one or both Of the electrodes is coupled to the rfgenerator through a series capacitor, a pulsating, negative ...
... sufficiently immobile that one would expect negligible ion bombardment Of the electrodes. In fact this is not the case. If one or both Of the electrodes is coupled to the rfgenerator through a series capacitor, a pulsating, negative ...
Page 32
... sufficiently thick ceramic to minimize capacitive losses. Water lines must be isolated from ground by putting several meters of insulating tubing in series with both inlet and outlet connections. Electrical connection from the power ...
... sufficiently thick ceramic to minimize capacitive losses. Water lines must be isolated from ground by putting several meters of insulating tubing in series with both inlet and outlet connections. Electrical connection from the power ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York