Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 76
... NS *1.0. Fig. 1. Schematic representation of the plasma in planar diode sputtering. tion, Delcroix I47]: momentum transfer (I). Christophorou [56]: momentum transfer. 76 JOHN A. THORNTON AND ALAN s. PENFOLD I. Introduction.
... NS *1.0. Fig. 1. Schematic representation of the plasma in planar diode sputtering. tion, Delcroix I47]: momentum transfer (I). Christophorou [56]: momentum transfer. 76 JOHN A. THORNTON AND ALAN s. PENFOLD I. Introduction.
Page 80
John L. Vossen. tion by electron—electron collisions and the randomizing effects of plasma oscillations) [44a]. Electron energies and temperatures are often specified in electron volts, where 1 eV = 11600 K [45]. Average electron ...
John L. Vossen. tion by electron—electron collisions and the randomizing effects of plasma oscillations) [44a]. Electron energies and temperatures are often specified in electron volts, where 1 eV = 11600 K [45]. Average electron ...
Page 84
... tion, Delcroix I47]: momentum transfer (I). Christophorou [56]: momentum transfer (2), Huxley and Crompton [57]; ionization. Kieffer and Dunn [58]. Fig. 9. Representative design of a cylindrical-post magnetron sputtering source. 84 JOHN ...
... tion, Delcroix I47]: momentum transfer (I). Christophorou [56]: momentum transfer (2), Huxley and Crompton [57]; ionization. Kieffer and Dunn [58]. Fig. 9. Representative design of a cylindrical-post magnetron sputtering source. 84 JOHN ...
Page 343
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Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York