Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 4
... vacuum. Not only are the important consequences of this covered, but the basic physics and technology of ion-gun structures are included. The same gun structures are used in ion-beam etching (ion milling) (Chapter V-2). The processes ...
... vacuum. Not only are the important consequences of this covered, but the basic physics and technology of ion-gun structures are included. The same gun structures are used in ion-beam etching (ion milling) (Chapter V-2). The processes ...
Page 5
... vacuum techniques: ion beam etching (milling), rfsputter etching with inert-gas ions, plasma etching in which reactive-gas ions and excited neutrals form volatile compounds with film surfaces, and reactive-ion etching which is a hybrid ...
... vacuum techniques: ion beam etching (milling), rfsputter etching with inert-gas ions, plasma etching in which reactive-gas ions and excited neutrals form volatile compounds with film surfaces, and reactive-ion etching which is a hybrid ...
Page 12
... positive ions strike the target plate and remove mainly neutral target atoms by momentum transfer, and these NEGATIVE VOLTAGE SUPPLY TARGET (SOURCE) GLOW DISCHARGE SUBSTRATE HOLDER VACUUM 12 J. L. VOSSEN AND J. J. CUOMO I. Introduction.
... positive ions strike the target plate and remove mainly neutral target atoms by momentum transfer, and these NEGATIVE VOLTAGE SUPPLY TARGET (SOURCE) GLOW DISCHARGE SUBSTRATE HOLDER VACUUM 12 J. L. VOSSEN AND J. J. CUOMO I. Introduction.
Page 13
... VACUUM _. CHAMBER r 1 l [L I VACUUM l PUMPS SPUTTERING GAS SOURCE Fig. I. Simplified cross section ofa sputtering system. condense into thin films. There are, in addition, other particles and radiation produced at the target, all of ...
... VACUUM _. CHAMBER r 1 l [L I VACUUM l PUMPS SPUTTERING GAS SOURCE Fig. I. Simplified cross section ofa sputtering system. condense into thin films. There are, in addition, other particles and radiation produced at the target, all of ...
Page 23
... vacuum pumps. If truly stoichiometric oxides, nitrides, sulfides, etc. are desired in the film, it is virtually always required to add 02, N2, H28, etc. to the sputtering gas to ensure stoichiometry by reactive sputtering. In some cases ...
... vacuum pumps. If truly stoichiometric oxides, nitrides, sulfides, etc. are desired in the film, it is virtually always required to add 02, N2, H28, etc. to the sputtering gas to ensure stoichiometry by reactive sputtering. In some cases ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York