Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 12
... voltage supply (dc or rf). The substrate holder faces the target. The holder may be grounded, floating, biased, heated, cooled, or some combination of these. A gas is introduced to provide a medium in which a glow discharge can be ...
... voltage supply (dc or rf). The substrate holder faces the target. The holder may be grounded, floating, biased, heated, cooled, or some combination of these. A gas is introduced to provide a medium in which a glow discharge can be ...
Page 13
John L. Vossen. NEGATIVE VOLTAGE SUPPLY TARGET (SOURCE) GLOW DISCHARGE SUBSTRATE HOLDER VACUUM _. CHAMBER r 1 l [L I VACUUM l PUMPS SPUTTERING GAS SOURCE Fig. I. Simplified cross section ofa sputtering system. condense into thin films ...
John L. Vossen. NEGATIVE VOLTAGE SUPPLY TARGET (SOURCE) GLOW DISCHARGE SUBSTRATE HOLDER VACUUM _. CHAMBER r 1 l [L I VACUUM l PUMPS SPUTTERING GAS SOURCE Fig. I. Simplified cross section ofa sputtering system. condense into thin films ...
Page 24
... voltage is first applied, a very small current flows. This is due to the presence ofa small number of ions and electrons resulting from a variety of sources (e.g.. cosmic radiation). Initially, the current is nearly constant, because ...
... voltage is first applied, a very small current flows. This is due to the presence ofa small number of ions and electrons resulting from a variety of sources (e.g.. cosmic radiation). Initially, the current is nearly constant, because ...
Page 25
... voltage, and the low-voltage high-current arc discharge forms. The foregoing represents a qualitative description of the various dc discharge modes. Several more quantitative reviews have appeared [1 14— 117]. Crucial to the formation ...
... voltage, and the low-voltage high-current arc discharge forms. The foregoing represents a qualitative description of the various dc discharge modes. Several more quantitative reviews have appeared [1 14— 117]. Crucial to the formation ...
Page 26
John L. Vossen. VOLTAGE it PRESSURE X SEPARATION Fig. 4. Paschen"s Law. Figure 5 illustrates the luminous regions of a dc glow discharge, the voltage distribution, and the net space charge as a function of distance from cathode to anode ...
John L. Vossen. VOLTAGE it PRESSURE X SEPARATION Fig. 4. Paschen"s Law. Figure 5 illustrates the luminous regions of a dc glow discharge, the voltage distribution, and the net space charge as a function of distance from cathode to anode ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York