Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 14
... energy range of practical interest for sputtering processes (10—5000 eV), the yield increases with incident ion energy, and with the mass and d-shell filling 14 J. L. VOSSEN AND J. J. cuomo II. Physical and Chemical Effects of Ion ...
... energy range of practical interest for sputtering processes (10—5000 eV), the yield increases with incident ion energy, and with the mass and d-shell filling 14 J. L. VOSSEN AND J. J. cuomo II. Physical and Chemical Effects of Ion ...
Page 15
John L. Vossen. incident ion energy, and with the mass and d-shell filling of the incident ion [19, 20]. The sputtering yield determines the erosion rate of sputtering targets; and largely, but not completely, determines the deposition ...
John L. Vossen. incident ion energy, and with the mass and d-shell filling of the incident ion [19, 20]. The sputtering yield determines the erosion rate of sputtering targets; and largely, but not completely, determines the deposition ...
Page 16
... energy equal to the target potential. As will be shown in Section III.A, these electrons help to sustain the glow discharge by ionization of neutral sputTable II Sputtering Yield of Elements at I keV Gas He. 16 J. L. VOSSEN AND J. .I.
... energy equal to the target potential. As will be shown in Section III.A, these electrons help to sustain the glow discharge by ionization of neutral sputTable II Sputtering Yield of Elements at I keV Gas He. 16 J. L. VOSSEN AND J. .I.
Page 17
... energy as they retain after collisions in the gas is liberated in the form of heat [38—43]. Many of the secondary electrons are thermalized by collisions in the gas, but even at high gas pressures, a substantial number of electrons ...
... energy as they retain after collisions in the gas is liberated in the form of heat [38—43]. Many of the secondary electrons are thermalized by collisions in the gas, but even at high gas pressures, a substantial number of electrons ...
Page 21
... energy (after Comas and Carosella [78]. with permission of The Electrochemical Society). E. Altered Surface Layers and Diffusion I. M ulticomponent Targets The bombardment ofa multicomponent solid surface with ions or neutral atoms ...
... energy (after Comas and Carosella [78]. with permission of The Electrochemical Society). E. Altered Surface Layers and Diffusion I. M ulticomponent Targets The bombardment ofa multicomponent solid surface with ions or neutral atoms ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York