Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
From inside the book
Page 3
... magnetic fields to produce high ion densities and high deposition rates with minimal substrate bOmbardment. Chapter II-2 describes cylindrical magnetrons in which the magnetic field is uniformly orthogonal to the electric field ...
... magnetic fields to produce high ion densities and high deposition rates with minimal substrate bOmbardment. Chapter II-2 describes cylindrical magnetrons in which the magnetic field is uniformly orthogonal to the electric field ...
Page 30
... magnetic fields, thermionic additions of electrons, and rf coils. The transverse magnetic field devices are described in Chapters II-2-II—4. ]. Axial Magnetic Field A magnetic field normal to the target surface constrains secondary ...
... magnetic fields, thermionic additions of electrons, and rf coils. The transverse magnetic field devices are described in Chapters II-2-II—4. ]. Axial Magnetic Field A magnetic field normal to the target surface constrains secondary ...
Page 43
... magnetic field applied (if any), and inversely proportional to the target voltage and to the sputtering yield of the materials involved [11, 212, 219]. Even at the lowest gas pressures at which a glow Fig. 12. Catcher (after Maissel et ...
... magnetic field applied (if any), and inversely proportional to the target voltage and to the sputtering yield of the materials involved [11, 212, 219]. Even at the lowest gas pressures at which a glow Fig. 12. Catcher (after Maissel et ...
Page 55
... MAGNETIC FIELD (GAUSS) Fig. 16. The variation of the floating potential with Ar pressure. target voltage, and axial magnetic field in a dc sputtering system. higher because the electron temperatures are higher for otherwise equivalent.
... MAGNETIC FIELD (GAUSS) Fig. 16. The variation of the floating potential with Ar pressure. target voltage, and axial magnetic field in a dc sputtering system. higher because the electron temperatures are higher for otherwise equivalent.
Page 59
... magnetic field, and system geometry. The interplay among these parameters is responsible for the varied results found in the literature. There are two mechanisms by which gas is incorporated: ions can be neutralized at the target ...
... magnetic field, and system geometry. The interplay among these parameters is responsible for the varied results found in the literature. There are two mechanisms by which gas is incorporated: ions can be neutralized at the target ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York