Thin Film ProcessesRemarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 13
... produced at the target, all of which may affect film properties (secondary electrons and ions, desorbed gases, x rays, and photons). The electrons and negative ions are accelerated toward the substrate platform and bombard it and the ...
... produced at the target, all of which may affect film properties (secondary electrons and ions, desorbed gases, x rays, and photons). The electrons and negative ions are accelerated toward the substrate platform and bombard it and the ...
Page 24
... produce more electrons that, in turn produce more ions. When the number of electrons generated is just sufficient to produce enough ions to regenerate the same number of electrons, the discharge is self-sustaining. The gas begins to ...
... produce more electrons that, in turn produce more ions. When the number of electrons generated is just sufficient to produce enough ions to regenerate the same number of electrons, the discharge is self-sustaining. The gas begins to ...
Page 25
... produce about 10—20 ions for the original avalanche to occur. If the gas pressure is too low or the cathode—anode separation too small, the secondaries cannot undergo a sufficient number of ionizing collisions before they strike the ...
... produce about 10—20 ions for the original avalanche to occur. If the gas pressure is too low or the cathode—anode separation too small, the secondaries cannot undergo a sufficient number of ionizing collisions before they strike the ...
Page 26
... produced at the cathode are neutralized by a variety of processes. This is also the region in which secondary electrons begin to accelerate away from the cathode. The light emitted is characteristic of both the cathode material and the ...
... produced at the cathode are neutralized by a variety of processes. This is also the region in which secondary electrons begin to accelerate away from the cathode. The light emitted is characteristic of both the cathode material and the ...
Page 31
John L. Vossen. capacitiver coupled rf source. This technique produces a very high ion density, allows operation at ... producing a large, uniform thermionic arc discharge. Numerous configurations have been described in the literature ...
John L. Vossen. capacitiver coupled rf source. This technique produces a very high ion density, allows operation at ... producing a large, uniform thermionic arc discharge. Numerous configurations have been described in the literature ...
Contents
9 | |
Chemical Methods of Film Deposition | 207 |
Physicalchemical Methods of Film Deposition | 333 |
Etching Processes | 399 |
Index | 557 |
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Common terms and phrases
A/min Abstr alloys anode Appl argon atoms cathode Chem chemical Chemical vapor deposition coatings composition compounds configuration current density deposition rate effect efficiency electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition first flow rate flux GaAs gas flow gases glow discharge polymerization heat increase ion beam deposition ion etching ionization Kern layer magnetic field magnetron mask metal mTorr nitride oxide photoresist Phys planar plasma etching plating PM sputtering pm/min polishing polymer polymer deposition potential pressure Proc produce profile ratio RCA Rev reaction reactive reactive sputtering reactor reflected Semiconductors shown in Fig SiH4 silicon silicon nitride SiO2 solution species sputter deposition sputter etching Sputter Gun sputtering yield starting material stoichiometry substrate sufficient susceptor techniques Technol temperature thermal thickness thin film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York