Istfa 2005: Proceedings of the 31st International Symposium for Testing and Failure Analysis

backside bondpad capacitor cell characterization chip circuit CMOS contact resistance contamination copper corrosion cross section cross-section damage defect delamination deprocessing device diagnosis dislocation dopant EBIC electrical emission etch failing Failure Analysis failure mechanism Figure 11 focused ion beam Freescale Semiconductor frequency functional gate oxide identified input inspection integrated circuits interface ion beam IREM ISTFA laser laser stimulation leakage lock-in lock-in amplifier magnification material measurements metal lines method microscopy mode node OBIRCH observed optical output package parameters pattern performed pixel polishing probe region root cause sample preparation scan chain Scanning Electron Microscope semiconductor Shmoo plot shown in Fig shows signal silicide silicon solder joints SRAM structure substrate surface Symposium for Testing technique temperature Testing and Failure thermal thickness TIVA tool transistor trench VCSEL voltage contrast wafer x-ray