Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 58
... annealing at 400 ° C for 30min . in N , is denoted as 1st annealed ; the 1st annealed stressed with 1st ( water ) boiling for 1hr . is denoted as 1st boiled . The 2nd annealed / boiled are prepared after 2nd annealing / boiling . As ...
... annealing at 400 ° C for 30min . in N , is denoted as 1st annealed ; the 1st annealed stressed with 1st ( water ) boiling for 1hr . is denoted as 1st boiled . The 2nd annealed / boiled are prepared after 2nd annealing / boiling . As ...
Page 59
... annealed samples to the moisture ambient before measurement of K / stress was minimized . RESULTS AND DISSCUSSION ... annealed annealed 8888880 100 86 ( b ) 72 AO in 58 44 30 As- deposited 1st 1st boiled 2nd annealed 2nd annealed boiled ...
... annealed samples to the moisture ambient before measurement of K / stress was minimized . RESULTS AND DISSCUSSION ... annealed annealed 8888880 100 86 ( b ) 72 AO in 58 44 30 As- deposited 1st 1st boiled 2nd annealed 2nd annealed boiled ...
Page 60
... annealed and 2nd annealed K values must be equal . Since they are not , chemical reaction must be involved during 1st boiling and / or 2nd annealing . חו Fig . 2 ( b ) shows the intrinsic stress during RABT . The intrinsic stress ( on ) ...
... annealed and 2nd annealed K values must be equal . Since they are not , chemical reaction must be involved during 1st boiling and / or 2nd annealing . חו Fig . 2 ( b ) shows the intrinsic stress during RABT . The intrinsic stress ( on ) ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines Microelectronics modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films