Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 186
... BCB film under compression , measured using the interdigitated electrodes , is plotted in Figure 3. The permittivity increases linearly ( R2 greater than 0.98 ) for compressive stresses greater than 2.5 MPa , with a slope of 0.51 ± 0.06 ...
... BCB film under compression , measured using the interdigitated electrodes , is plotted in Figure 3. The permittivity increases linearly ( R2 greater than 0.98 ) for compressive stresses greater than 2.5 MPa , with a slope of 0.51 ± 0.06 ...
Page 187
... film due to CTE mismatches with the substrate . Since the CTE of BCB ( 52 ppm / ° C ) is higher than the CTE of glass ( 9.4 ppm / ° C of soda - lime , 3.7 ppm / ° C for low expansion borosilicate ) , at room temperature the polymer film ...
... film due to CTE mismatches with the substrate . Since the CTE of BCB ( 52 ppm / ° C ) is higher than the CTE of glass ( 9.4 ppm / ° C of soda - lime , 3.7 ppm / ° C for low expansion borosilicate ) , at room temperature the polymer film ...
Page 188
... films respectively . These values compare well with the reported bulk BCB modulus value of 2.9 GPa1‚15 . 1,15 Since BCB is an electrically isotropic , glassy polymer , it follows that it is likely to be mechanically isotropic . Hence ...
... films respectively . These values compare well with the reported bulk BCB modulus value of 2.9 GPa1‚15 . 1,15 Since BCB is an electrically isotropic , glassy polymer , it follows that it is likely to be mechanically isotropic . Hence ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films