Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 224
Experimental Hydrogenated diamond like carbon films ( DLC ) deposition processes have been previously described ( 4,5 ) . The films were deposited on silicon wafers using an RF plasma CVD process with pure hydrocarbon precursor . The ...
Experimental Hydrogenated diamond like carbon films ( DLC ) deposition processes have been previously described ( 4,5 ) . The films were deposited on silicon wafers using an RF plasma CVD process with pure hydrocarbon precursor . The ...
Page 230
Material DLC k = 3.0 DLC k = 2.7 Table III ILD Polish Rates in copper polish process ILD polish rate relative to ... films is shown in Figure 5. Compared to silicon oxide , DLC is much less resistive , having a leakage flux of ...
Material DLC k = 3.0 DLC k = 2.7 Table III ILD Polish Rates in copper polish process ILD polish rate relative to ... films is shown in Figure 5. Compared to silicon oxide , DLC is much less resistive , having a leakage flux of ...
Page 385
... films , 371 silicon polymeric films , 297 charge instabilities , 317 chemical ( - ) mechanical planarization , 277 vapor deposition , 75 CMP , 277 parameters , 277 coefficient of thermal expansion , 183 confined submicron gap , 145 ...
... films , 371 silicon polymeric films , 297 charge instabilities , 317 chemical ( - ) mechanical planarization , 277 vapor deposition , 75 CMP , 277 parameters , 277 coefficient of thermal expansion , 183 confined submicron gap , 145 ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines Microelectronics modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films