Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 191
... films ( FSG ) for ILD applications [ 4-14 ] . An obvious advantage of these films is their similarity to standard oxide films , and hence their ability to be readily integrated into the fabrication process . However , it is acknowledged ...
... films ( FSG ) for ILD applications [ 4-14 ] . An obvious advantage of these films is their similarity to standard oxide films , and hence their ability to be readily integrated into the fabrication process . However , it is acknowledged ...
Page 192
... FSG films , and various barrier layers between metals and FSG films , were also investigated . EXPERIMENTAL DETAILS The FSG films used in this study were deposited in a commercial single wafer parallel- plate plasma enhanced chemical ...
... FSG films , and various barrier layers between metals and FSG films , were also investigated . EXPERIMENTAL DETAILS The FSG films used in this study were deposited in a commercial single wafer parallel- plate plasma enhanced chemical ...
Page 385
... films , 371 silicon polymeric films , 297 charge instabilities , 317 chemical ( - ) mechanical planarization , 277 vapor deposition , 75 CMP , 277 parameters , 277 coefficient of thermal expansion , 183 confined submicron gap , 145 ...
... films , 371 silicon polymeric films , 297 charge instabilities , 317 chemical ( - ) mechanical planarization , 277 vapor deposition , 75 CMP , 277 parameters , 277 coefficient of thermal expansion , 183 confined submicron gap , 145 ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films