Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 97
... Figure 3 . Higher temperature curing was employed with films obtained from the PAB monomer . Dramatic improvements in the thermal stabilities of these films were observed after the curing process . An example of this improved thermal ...
... Figure 3 . Higher temperature curing was employed with films obtained from the PAB monomer . Dramatic improvements in the thermal stabilities of these films were observed after the curing process . An example of this improved thermal ...
Page 113
... ( figure 8 ) . 5 um Figure 6- Unleached Surface of 10:90 Film 5 um 5 um Figure 7 - Unleached Surface of 30:70 Film Figure 8- Leached Surface of 30:70 Film Gap Filling Porous films , of different compositions , were deposited on wafers ...
... ( figure 8 ) . 5 um Figure 6- Unleached Surface of 10:90 Film 5 um 5 um Figure 7 - Unleached Surface of 30:70 Film Figure 8- Leached Surface of 30:70 Film Gap Filling Porous films , of different compositions , were deposited on wafers ...
Page 206
... Figure 1 is an example of the type of polymer integration approach that is generally considered to be optimal both for process simplicity and capacitance reduction ... Figure 4 . K K I Figure 4 shows an example of vias etched through. 206.
... Figure 1 is an example of the type of polymer integration approach that is generally considered to be optimal both for process simplicity and capacitance reduction ... Figure 4 . K K I Figure 4 shows an example of vias etched through. 206.
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
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Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films