Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 63
... ( HDP - CVD ) [ 4,5 ] . However , the dielectric constant of the fluorinated SiO2 films is difficult to be lowered to less than 3.5 by CVD processes without significantly degrading its chemical and other properties [ 6 ] . The electrical ...
... ( HDP - CVD ) [ 4,5 ] . However , the dielectric constant of the fluorinated SiO2 films is difficult to be lowered to less than 3.5 by CVD processes without significantly degrading its chemical and other properties [ 6 ] . The electrical ...
Page 292
... HDP - CVD ( ANELVA ILV - 4100 ) . A 13.56 - MHz rf source was coupled to the helical coil wound around the quartz tube . A bias power of 400 kHz was applied to the substrate . The ion energy is controlled by applying the bias power to ...
... HDP - CVD ( ANELVA ILV - 4100 ) . A 13.56 - MHz rf source was coupled to the helical coil wound around the quartz tube . A bias power of 400 kHz was applied to the substrate . The ion energy is controlled by applying the bias power to ...
Page 342
... ( HDP - CVD : ANELVA ILV - 4100 ) using CF , gas [ 4 ] . The thermal conductivity of the a - C : F films ( 0.108 W / m K ) is about one order lower than that of SiO2 films ( 1.2 W / m K ) . Moreover , the mechanical strength of the a - C ...
... ( HDP - CVD : ANELVA ILV - 4100 ) using CF , gas [ 4 ] . The thermal conductivity of the a - C : F films ( 0.108 W / m K ) is about one order lower than that of SiO2 films ( 1.2 W / m K ) . Moreover , the mechanical strength of the a - C ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films