Materials Research Society Symposia Proceedings, Volume 511 |
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Page 260
Two different reactor platforms, PECVD and HDP, were used to generate the
FLAC, a-C:H, and a- SiC:H materials. ... modified to run the desired process (
system description has been reported elsewhere).7 The PECVD F1AC film stack
(liner, ...
Two different reactor platforms, PECVD and HDP, were used to generate the
FLAC, a-C:H, and a- SiC:H materials. ... modified to run the desired process (
system description has been reported elsewhere).7 The PECVD F1AC film stack
(liner, ...
Page 261
Results and PECVD F1AC Initial work with PECVD F1AC with hard masks
reveled that when the standard F1AC process (a- C:H/F1AC/a-C:H stack, -250 A
a- C:H each, 1 hr, 400 °C anneal),6 was topped with a hard mask material, the
SiO2 ...
Results and PECVD F1AC Initial work with PECVD F1AC with hard masks
reveled that when the standard F1AC process (a- C:H/F1AC/a-C:H stack, -250 A
a- C:H each, 1 hr, 400 °C anneal),6 was topped with a hard mask material, the
SiO2 ...
Page 318
The paper begins by summarizing a previous study of Cu+ drift in PECVD oxide
to develop a foundation for the experiments to follow [16]. It then outlines the
fabrication sequence of the low-K polymer capacitors and subsequently
elucidates ...
The paper begins by summarizing a previous study of Cu+ drift in PECVD oxide
to develop a foundation for the experiments to follow [16]. It then outlines the
fabrication sequence of the low-K polymer capacitors and subsequently
elucidates ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
42 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1998 Materials Research a-C:F films a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition coefficient concentration copper curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate F1AC film thickness fluorine fluorocarbon FTIR function hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k lower Materials Research Society measured mechanical metal lines Microelectronics modulus moisture molecular nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silicon oxide silsesquioxane spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel
Bibliographic information
| Title | Materials Research Society Symposia Proceedings, Volume 511 Materials Research Society Symposia Proceedings, Materials Research Society Symposia Proceedings |
| Author | Chien Chiang |
| Contributor | Materials Research Society |
| Publisher | North Holland, 1998 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |