Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 99
... Rensselaer Polytechnic Institute , Troy , NY 12180 ABSTRACT Xerogel films of high porosity were fabricated using an ambient pressure technique . The same porosity can be obtained with different microstructures by varying the aging time ...
... Rensselaer Polytechnic Institute , Troy , NY 12180 ABSTRACT Xerogel films of high porosity were fabricated using an ambient pressure technique . The same porosity can be obtained with different microstructures by varying the aging time ...
Page 191
... Rensselaer Polytechnic Institute , Department of Materials Engineering and Center for Integrated Electronics and Electronic Manufacturing , Troy , NY , 12180 Atul Kumar and H. Bakhru , SUNY at Albany , Department of Physics , Albany ...
... Rensselaer Polytechnic Institute , Department of Materials Engineering and Center for Integrated Electronics and Electronic Manufacturing , Troy , NY , 12180 Atul Kumar and H. Bakhru , SUNY at Albany , Department of Physics , Albany ...
Page 265
... State University of New York , Albany , NY 12222 * Current address : IBM Microelectronics , Hopewell Junction , NY 12533. Work done while at Digital Equipment Corporation , Hudson , MA 01749 ** Rensselaer Polytechnic Institute , Troy ...
... State University of New York , Albany , NY 12222 * Current address : IBM Microelectronics , Hopewell Junction , NY 12533. Work done while at Digital Equipment Corporation , Hudson , MA 01749 ** Rensselaer Polytechnic Institute , Troy ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films