Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 33
... film stresses ; and reactivity with water - leading to susceptibility to ... SOG ) . Silsesquioxanes have the general chemical formula ( RSIO15 ) , where ... SOG film usually involves dissolving an SSQ oligomer in a solvent , spinning the ...
... film stresses ; and reactivity with water - leading to susceptibility to ... SOG ) . Silsesquioxanes have the general chemical formula ( RSIO15 ) , where ... SOG film usually involves dissolving an SSQ oligomer in a solvent , spinning the ...
Page 171
... film thickness and variations in the curing process . An implication is that , on curing , the driving force for ... ( SOG ) thin films [ 2 , 3 ] , including the strong dependencies of the crack velocity on crack driving force and relative ...
... film thickness and variations in the curing process . An implication is that , on curing , the driving force for ... ( SOG ) thin films [ 2 , 3 ] , including the strong dependencies of the crack velocity on crack driving force and relative ...
Page 175
... SOG films depend in different ways on the degree of polymerization generated during curing and therefore proceed during curing at different rates . The crack driving force in an SSQ SOG film at room temperature derives from a residual ...
... SOG films depend in different ways on the degree of polymerization generated during curing and therefore proceed during curing at different rates . The crack driving force in an SSQ SOG film at room temperature derives from a residual ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films