Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 112
... Section of 10:90 Porous Silica Film Figure 4 - Cross Section of 20:80 Porous Silica Film 1 um Figure 5- Cross section of 30:70 Porous Silica Film Leaching During the gelation process , alkali salts are exuded. 112.
... Section of 10:90 Porous Silica Film Figure 4 - Cross Section of 20:80 Porous Silica Film 1 um Figure 5- Cross section of 30:70 Porous Silica Film Leaching During the gelation process , alkali salts are exuded. 112.
Page 309
... section and line section . In general , efficient designs cannot allow significant reservoir volumes at the cathode ends of lines . The reservoirs referred to in this case are the volumes created to cover the tops of vias between levels ...
... section and line section . In general , efficient designs cannot allow significant reservoir volumes at the cathode ends of lines . The reservoirs referred to in this case are the volumes created to cover the tops of vias between levels ...
Page 311
... section and a line section . The reservoir section AL . is the line / stud overlapping area . Material depletion from the cathode end causes a small resistance change when the void grows in the reservoir section and causes a sharp ...
... section and a line section . The reservoir section AL . is the line / stud overlapping area . Material depletion from the cathode end causes a small resistance change when the void grows in the reservoir section and causes a sharp ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines Microelectronics modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films