Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 256
... Si - F bonds were identified in the surface layer of the film after plasma etching . Several studies4-5 of F - doped SiO2 films indicated that introducing Si - F can decrease atomic contribution to the dielectric constant due to ...
... Si - F bonds were identified in the surface layer of the film after plasma etching . Several studies4-5 of F - doped SiO2 films indicated that introducing Si - F can decrease atomic contribution to the dielectric constant due to ...
Page 371
... Si - O - F alloys with low alloy concentrations of F - atoms , ~ 22 % for F concentrations of ~ 10 at . % . The present study addresses the stability of these alloy films and carbon - fluorine films with respect to attack of Si - F bonds or ...
... Si - O - F alloys with low alloy concentrations of F - atoms , ~ 22 % for F concentrations of ~ 10 at . % . The present study addresses the stability of these alloy films and carbon - fluorine films with respect to attack of Si - F bonds or ...
Page 372
... F content . The reaction pathway attack of the Si - O - F film by water was through near - neighbor F atom bonding sites , e.g. , those with paired Si - F atom bonding arrangements . Since these dominate when the fraction of Si - F ...
... F content . The reaction pathway attack of the Si - O - F film by water was through near - neighbor F atom bonding sites , e.g. , those with paired Si - F atom bonding arrangements . Since these dominate when the fraction of Si - F ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines Microelectronics modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films