Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 44
... Si ring structure as seen by the stronger absorption at 1140 cm1 than that at 1050 cm1 . As the sample is cured to ... H stretching mode at 2240 cm1 and the Si - H waging vibration from 800 cm1 to 900 cm - 1 begin to decrease at curing ...
... Si ring structure as seen by the stronger absorption at 1140 cm1 than that at 1050 cm1 . As the sample is cured to ... H stretching mode at 2240 cm1 and the Si - H waging vibration from 800 cm1 to 900 cm - 1 begin to decrease at curing ...
Page 163
... Si - H bond densities , in turn increasing the Si - O - Si densities as the polymerization of the material advances . This leads to hardening of the films and to increased resistance to cracking . Similar tendencies were observed by Chi ...
... Si - H bond densities , in turn increasing the Si - O - Si densities as the polymerization of the material advances . This leads to hardening of the films and to increased resistance to cracking . Similar tendencies were observed by Chi ...
Page 374
H.Si ŞİH , SIH , RH - F 8 RH - F = ∞ 0.0 -0.1 H , Si ŞiH , SiH , -0.2 RH - F 2 HF + ΔΕ ( eV ) RH - F -0.3 -0.4- O O Si H , Si SiH , SIH , -0.5 O H , Si SIH , SIH , AE = -0.72 eV exothermic ( a ) 1 2 3 4 5 H - F Distance ( Å ) ( b ) ...
H.Si ŞİH , SIH , RH - F 8 RH - F = ∞ 0.0 -0.1 H , Si ŞiH , SiH , -0.2 RH - F 2 HF + ΔΕ ( eV ) RH - F -0.3 -0.4- O O Si H , Si SiH , SIH , -0.5 O H , Si SIH , SIH , AE = -0.72 eV exothermic ( a ) 1 2 3 4 5 H - F Distance ( Å ) ( b ) ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films