Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 29
... Si , O and C , with concentration ratio , Si : C : O of 1 : 1 : 1.5 . A C signal remained , with a reduced intensity , at 600 ° C vacuum - annealing . Small amount ( about 10 % ) of C remained even at the 700 ° C annealing . The signal ...
... Si , O and C , with concentration ratio , Si : C : O of 1 : 1 : 1.5 . A C signal remained , with a reduced intensity , at 600 ° C vacuum - annealing . Small amount ( about 10 % ) of C remained even at the 700 ° C annealing . The signal ...
Page 371
... Si - F → 2 HF + Si - O - Si is exothermic by about 0.7 eV . However , the reaction of H2O + 2 C - F → 2 HF + C- O - C is calculated to be endothermic by 1.6 eV . Our calculations focus on the reaction energetics and geometries as a ...
... Si - F → 2 HF + Si - O - Si is exothermic by about 0.7 eV . However , the reaction of H2O + 2 C - F → 2 HF + C- O - C is calculated to be endothermic by 1.6 eV . Our calculations focus on the reaction energetics and geometries as a ...
Page 372
.... The near - neighbor { Si - OH Si - OH } configurations can be removed by relatively low temperature thermal annealing as in Ref . 4 via the following reaction : .... { Si - OH Si - OH } → Si - O - Si + H2O so that combined effect ...
.... The near - neighbor { Si - OH Si - OH } configurations can be removed by relatively low temperature thermal annealing as in Ref . 4 via the following reaction : .... { Si - OH Si - OH } → Si - O - Si + H2O so that combined effect ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films