Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-2 of 2
Page 269
... SiF4 . The diffusion of reactive radicals , such as atomic fluorine , through the fluorocarbon film may be less important in this case . In a C3F6 / H2 discharge the fluorocarbon film is thicker than the penetration depth of the ions ...
... SiF4 . The diffusion of reactive radicals , such as atomic fluorine , through the fluorocarbon film may be less important in this case . In a C3F6 / H2 discharge the fluorocarbon film is thicker than the penetration depth of the ions ...
Page 348
... SiF4 gas was introduced into the reaction chamber , while O2 and Ar gases were introduced into the plasma generation chamber . The substrates employed in this study were B - doped p - type Si ( 100 ) wafers . The post plasma treatment ...
... SiF4 gas was introduced into the reaction chamber , while O2 and Ar gases were introduced into the plasma generation chamber . The substrates employed in this study were B - doped p - type Si ( 100 ) wafers . The post plasma treatment ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films