Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 62
Page 293
... SiO2 is about 30-40 % , which is the same as without SiO2 . Reflection decreases independent of wavelength when the surface of the Cu oxidizes . Therefore , the silicon oxide formation process was less oxidized at the surface of the Cu ...
... SiO2 is about 30-40 % , which is the same as without SiO2 . Reflection decreases independent of wavelength when the surface of the Cu oxidizes . Therefore , the silicon oxide formation process was less oxidized at the surface of the Cu ...
Page 313
... SiO2 structure at 314 ° C and for 1.9 μm wide lines in Cu / PI at 355 ° C . Using the expression , t = t 。 j " , where t 。 is a constant , the values of n for j < 2 x106 A / cm2 were found to be -1.1 ± 0.2 for Cu / SiO2 10 and -2.2 ...
... SiO2 structure at 314 ° C and for 1.9 μm wide lines in Cu / PI at 355 ° C . Using the expression , t = t 。 j " , where t 。 is a constant , the values of n for j < 2 x106 A / cm2 were found to be -1.1 ± 0.2 for Cu / SiO2 10 and -2.2 ...
Page 342
SiO2 ILD Low - k ILD Heat dissipation Wiring SiO2 Wiring SiO2 Figure 1. Heat dissipation difference between SiO , ILD and low - k ILD . temperature for low - k ILD rises more than that for SiO , ILD [ 3 ] . Moreover , the increase of ...
SiO2 ILD Low - k ILD Heat dissipation Wiring SiO2 Wiring SiO2 Figure 1. Heat dissipation difference between SiO , ILD and low - k ILD . temperature for low - k ILD rises more than that for SiO , ILD [ 3 ] . Moreover , the increase of ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films