Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 293
The reflection of Cu with SiO2 is about 30 - 40 % , which is the same as without
SiO2 . Reflection decreases independent of wavelength when the surface of the
Cu oxidizes . Therefore , the silicon oxide formation process was less oxidized at
...
The reflection of Cu with SiO2 is about 30 - 40 % , which is the same as without
SiO2 . Reflection decreases independent of wavelength when the surface of the
Cu oxidizes . Therefore , the silicon oxide formation process was less oxidized at
...
Page 313
3 um wide lines in Cu / SiO2 structure at 314 °C and for 1 . 9 um wide lines in Cu /
Pl at 355 °C . Using the expression , t = to j " , where to is a constant , the values
of n for j < 2 x106 A / cm2 were found to be - 1 . 1 + 0 . 2 for Cu / SiO2 10 and - 2 ...
3 um wide lines in Cu / SiO2 structure at 314 °C and for 1 . 9 um wide lines in Cu /
Pl at 355 °C . Using the expression , t = to j " , where to is a constant , the values
of n for j < 2 x106 A / cm2 were found to be - 1 . 1 + 0 . 2 for Cu / SiO2 10 and - 2 ...
Page 342
Low - k ILD SiO2 ILD Heat dissipation Wiring Wiring SiO2 SiO2 Figure 1 . Heat
dissipation difference between SiO , LD and low - k ILD . temperature for low - k
ILD rises more than that for SiO , ILD ( 3 ] . Moreover , the increase of the wiring ...
Low - k ILD SiO2 ILD Heat dissipation Wiring Wiring SiO2 SiO2 Figure 1 . Heat
dissipation difference between SiO , LD and low - k ILD . temperature for low - k
ILD rises more than that for SiO , ILD ( 3 ] . Moreover , the increase of the wiring ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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Common terms and phrases
adhesion annealing applications atoms bonds calculated capacitance carbon cause characteristics chemical compared concentration copper crack curing decrease density dependence deposition depth determined developed devices dielectric constant diffusion e-beam effect electrical electron energy etch Figure fluorine frequency function glass heating higher hydrogen increase indicate integration interconnect interface layer less lines load low-k lower materials measured mechanical metal moisture observed obtained organic oxide oxygen peak performance plasma polished polyimide polymer polymerization porosity porous precursors present Proc properties pulse range ratio reaction reduced relative removal Research resistance samples shown in Figure shows silica silicon SiO2 spectra stability strength stress structure substrate surface Symp Table technique temperature thermal thickness thin films treatment values Volume wafer wiring xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1998 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558994173, 9781558994171 |
| Export Citation | BiBTeX EndNote RefMan |