Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 347
RELIABILITY OF Cu / WN THIN FILMS DEPOSITED ON LOW DIELECTRIC CONSTANT SIOF ILD Seoghyeong Lee , Dong Joon Kim , Sung - Hoon Yang , Jeongwon Park , Seil Sohn , Kyunghui Oh * , Yong - Tae Kim ** and Jong - Wan ... SiOF films in the Cu 347.
RELIABILITY OF Cu / WN THIN FILMS DEPOSITED ON LOW DIELECTRIC CONSTANT SIOF ILD Seoghyeong Lee , Dong Joon Kim , Sung - Hoon Yang , Jeongwon Park , Seil Sohn , Kyunghui Oh * , Yong - Tae Kim ** and Jong - Wan ... SiOF films in the Cu 347.
Page 348
analyze the reliability of the SiOF films in the Cu / WN / SiOF / Si multilayer structure for the multilevel interconnections of ULSIs . EXPERIMENT The SiOF films were deposited using an electron cyclotron resonance chemical vapor ...
analyze the reliability of the SiOF films in the Cu / WN / SiOF / Si multilayer structure for the multilevel interconnections of ULSIs . EXPERIMENT The SiOF films were deposited using an electron cyclotron resonance chemical vapor ...
Page 352
WN SIOF SIOF Si 1000 A ( a ) ( b ) 1000 A Fig . 8 Cross - sectional TEM images of Cu / WN / SiOF / Si films after Cu etched ; ( a ) as- deposited and ( b ) 800 ° C RTA treatment for 30sec . treatment was decreased in magnitude ...
WN SIOF SIOF Si 1000 A ( a ) ( b ) 1000 A Fig . 8 Cross - sectional TEM images of Cu / WN / SiOF / Si films after Cu etched ; ( a ) as- deposited and ( b ) 800 ° C RTA treatment for 30sec . treatment was decreased in magnitude ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films