Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 354
... TEOS or PAE were deposited onto the substrate to mimic a first - level dielectric structure in a multilevel interconnect structure . Poly ( arylene ether ) ( PAE ) is a spin - coated organic low k dielectric which is cast from ...
... TEOS or PAE were deposited onto the substrate to mimic a first - level dielectric structure in a multilevel interconnect structure . Poly ( arylene ether ) ( PAE ) is a spin - coated organic low k dielectric which is cast from ...
Page 356
... TEOS -- PAE Table I. The temperature increase in Al ( 0.5 wt % Cu ) due to Joule heating for four typical electromigration testing current densities . TEOS PAE ΔΤ ( ° C ) at 1E6 A / cm2 01 . 1.7 AT ( ° C ) 0.98 at 2E6 A / cm2 0.5 7.4 0 ...
... TEOS -- PAE Table I. The temperature increase in Al ( 0.5 wt % Cu ) due to Joule heating for four typical electromigration testing current densities . TEOS PAE ΔΤ ( ° C ) at 1E6 A / cm2 01 . 1.7 AT ( ° C ) 0.98 at 2E6 A / cm2 0.5 7.4 0 ...
Page 357
Table II . Median time to failure for TEOS and PAE passivated lines Temperature TEOS PAE MTTF ( hrs ) Std . Dev . MTTF ( hrs ) Std . Dev . 227 ° C 1488 0.198 1898 0.161 248 ° C 262 ° C 700 357 0.146 910 0.120 0.163 491 0.106 C. EM ...
Table II . Median time to failure for TEOS and PAE passivated lines Temperature TEOS PAE MTTF ( hrs ) Std . Dev . MTTF ( hrs ) Std . Dev . 227 ° C 1488 0.198 1898 0.161 248 ° C 262 ° C 700 357 0.146 910 0.120 0.163 491 0.106 C. EM ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films